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BFY196 Datasheet - Infineon Technologies AG

BFY196 HiRel NPN Silicon RF Transistor

BFY196 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz F = 3 dB at 2 GHz Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 07 (tbc.) 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY196 (ql) (ql) Qu.

BFY196 Datasheet (437.81 KB)

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Datasheet Details

Part number:

BFY196

Manufacturer:

Infineon ↗ Technologies AG

File Size:

437.81 KB

Description:

Hirel npn silicon rf transistor.

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BFY196 HiRel NPN Silicon Transistor Infineon Technologies AG

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