BFY180 Features
* HiRel Discrete and Microwave Semiconductor
* For low power amplifiers at collector currents from 0.2 to 2.5 mA
* Hermetically sealed microwave package
* fT = 6.5 GHz, F = 2.6 dB at 2 GHz
* qualified
* ESA/SCC Detail Spec. No.: 5611/006 BFY 180 Micro-X1 ESD: Electrostatic
Datasheet Details
BFY180
Siemens Semiconductor Group
121.43 KB
Hirel npn silicon rf transistor (hirel discrete and microwave semiconductor for low power amplifiers at collector currents from 0.2 to 2.5 ma).
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