HiRel Datasheet | Specifications & PDF Download

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CFY25 HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f

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BFY420 HiRel NPN Silicon RF Transistor BFY420(ES) Features 4  For Low Current Applications  For Oscillators up to 10 GHz  Noise Figure F = 1.

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OPA549-HiRel www.ti.com SLOS744 – MAY 2012 HIGH-VOLTAGE, HIGH-CURRENT OPERATIONAL AMPLIFIER Check for Samples: OPA549-HiRel FEATURES 1 • High Outp

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OMAP3503-HiRel www.ti.com OMAP3503-HiRel Applications Processor Check for Samples: OMAP3503-HiRel SPRS663 – FEBRUARY 2010 1 OMAP3503-HiRel Applica

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CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend

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OMAP3525-HiRel, OMAP3530-HiRel www.ti.com SPRS599D – JUNE 2009 – REVISED AUGUST 2010 OMAP3525-HiRel and OMAP3530-HiRel Applications Processor Check

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CFY25 HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f

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CFY25 HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For f

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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OMAP3525-HiRel, OMAP3530-HiRel www.ti.com SPRS599D – JUNE 2009 – REVISED AUGUST 2010 OMAP3525-HiRel and OMAP3530-HiRel Applications Processor Check

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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Silicon Schottky Diodes q q q BAT 14- … 4 Medium barrier diodes for detector and mixer applications Hermetical ceramic package For frequencies up to

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Data Sheet BUY25CS45B-01 HiRel RadHard Power-MOS  Low RDS(on)  Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS =

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CFY27 HiRel Ku-Band GaAs General Purpose MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers F

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CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend

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HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector cur

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HiRel Silicon Schottky Diode Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Herme

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CFY27 HiRel Ku-Band GaAs General Purpose MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers F

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