BFY450 HiRel NPN Silicon RF Transistor

Infineon

Description

BFY450 HiRel NPN Silicon RF Transistor BFY450(ES) .
ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3.

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Datasheet Specifications

Part number: BFY450
Manufacturer: Infineon ↗
File Size: 359.50 KB
Datasheet: BFY450-Infineon.pdf
Description: HiRel NPN Silicon RF Transistor

Features

* 4
* For Medium Power Amplifiers
* Compression point P-1dB = 19 dBm at 1.8 GHz Max. available gain Gma = 16dB at 1.8 GHz
* Hermetically sealed microwave package 1
* Transition Frequency fT = 20 GHz
* SIEGET25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-

BFY450 Distributors

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BFY450 HiRel NPN Silicon Transistor Infineon

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