BFY650B-11 Datasheet - Infineon

BFY650B-11 NPN Silicon Germanium RF Transistor

HiRel NPN Silicon Germanium RF Transistor 4 HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz 1 Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package Space Qualified ESCC Detail Spec. No.: 5611/010 BFY650B-11 3 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY650B-11 Marking - Pin Configu.

BFY650B-11 Datasheet (158.43 KB)

BFY650B-11 Datasheet Preview — Preview of BFY650B-11 PDF

Datasheet Details

Part number:

BFY650B-11

Manufacturer:

Infineon ↗

File Size:

158.43 KB

Description:

Npn silicon germanium rf transistor.

📁 Related Datasheet

BFY64 Bipolar PNP Device (Seme LAB)

BFY64 Medium Power Amplifier/Switches (Micro Electronics)

BFY64 PNP Transistor (SGS-ATES)

BFY640-04 NPN Silicon Germanium RF Transistor (Infineon)

BFY67 Silicon NPN Transistor (Valvo)

BFY68 Silicon NPN Transistor (Valvo)

BFY180 HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) (Siemens Semiconductor Group)

BFY180 HiRel NPN Silicon RF Transistor (Infineon Technologies AG)

TAGS

BFY650B-11 NPN Silicon Germanium Transistor Infineon

BFY650B-11 Distributor