BFY640-04 Datasheet - Infineon

BFY640-04 NPN Silicon Germanium RF Transistor

HiRel NPN Silicon Germanium RF Transistor 4 HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz 1 Noise figure F = 1.1 dB at 6 GHz Hermetically sealed microwave package Space Qualified ESCC Detail Spec. No.: 5611/009 BFY640-04 3 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY640-04 Marking - Pin Config.

BFY640-04-Infineon.pdf

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Datasheet Details

Part number:

BFY640-04

Manufacturer:

Infineon ↗

File Size:

220.31 KB

Description:

Npn silicon germanium rf transistor.

BFY640-04 Distributor

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BFY640-04 BFY640-04 NPN Silicon Germanium Transistor Infineon