HiRel NPN Silicon Germanium RF Transistor 4 HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz 1 Noise figure F = 1.1 dB at 6 GHz Hermetically sealed microwave package Space Qualified ESCC Detail Spec.
No.: 5611/009 BFY640-04 3 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY640-04 Marking - Pin Config
