BFY196 Features
* HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz ESA Qualification pending Micro-X1 ESD: Electrostatic discharge sensit
BFY196_SiemensSemiconductorGroup.pdf
Datasheet Details
BFY196
Siemens Semiconductor Group
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Hirel npn silicon rf transistor (hirel discrete and microwave semiconductor for low noise/ high gain amplifiers up to 2 ghz.).
BFY196 Distributor
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