.
Samsung semiconductor
S5L9250B - The CD-ROM 48X 1 chip receives the input signal read from the CD-DA/VIDEO-CD/CD-ROM disc after handling by the RF amplifier.
DATA SHEET S5L9250B INTRODUCTION The CD-ROM 48X 1 chip receives the input signal read from the CD-DA/VIDEO-CD/CD-ROM disc after handling by the RF a.
Siemens Semiconductor Group
CLY5 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
GaAs FET CLY 5 ________________________________________________________________________________________________________ Datasheet * Power amplifier.
Pericom Semiconductor
PI3VDP411LS - Digital Video Level Shifter from AC coupled digital video input to a DVI/HDMI transmitter
PI3VDP411LS Digital Video Level Shifter from AC Coupled Digital Video Input to a DVI/HDMI™ Transmitter Features Description ÎÎConverts low-swing AC.
Siemens Semiconductor Group
CLY10 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
GaAs FET CLY 10 _________________________________________________________________________________________________________ Datasheet * Power amplifi.
Siemens Semiconductor Group
CLY15 - GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)
GaAs FET CLY 15 ________________________________________________________________________________________________________ Datasheet * Power amplifie.
Siemens Semiconductor Group
BFR92P - NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)
BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • C.
Siemens Semiconductor Group
BFR93P - NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
NPN Silicon RF Transistor q q BFR 93P For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. CECC-type availa.
Siemens Semiconductor Group
BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
HiRel NPN Silicon RF Transistor Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5.
Siemens Semiconductor Group
BFQ29 - NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
NPN Silicon RF Transistor q q BFQ 29P For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. CECC-type avai.
Siemens Semiconductor Group
BFQ29P - NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
NPN Silicon RF Transistor q q BFQ 29P For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. CECC-type avai.
Samsung semiconductor
S5C7320X01 - S5C7320X01 receives digital data from CCD-using video camera systems such as MMPC and surveillance cameras/ and outputs combined video signals
S5C7320X01 DATA SHEET PRODUCT SUMMARY 100-TQFP-1414 INTRODUCTION S5C7320X01 receives digital data from CCD-using video camera systems such as MMPC .
Samsung semiconductor
S5C7320X01-T0R0 - S5C7320X01 receives digital data from CCD-using video camera systems such as MMPC and surveillance cameras/ and outputs combined video signals
S5C7320X01 DATA SHEET PRODUCT SUMMARY 100-TQFP-1414 INTRODUCTION S5C7320X01 receives digital data from CCD-using video camera systems such as MMPC .
ETC
SC-7415 - Heterotrimeric G proteins function to relay information from cell surface receptors to intracellular effectors
Santa Cruz Biotechnology, Inc. SANTA CRUZ G α 16 (C-18): sc-7415 BIOTECHNOLOGY BACKGROUND Heterotrimeric G proteins function to relay information f.
NXP
SAA5355 - Single-chip colour CRT controller FTFROM
INTEGRATED CIRCUITS DATA SHEET SAA5355 Single-chip colour CRT controller (FTFROM) Product specification File under Integrated Circuits, IC02 March 19.
SAFT
BA5847B - Assembled from 2 LO 26 SX cells connected
Li-SO2 primary battery system BA 5847 B/U Assembled from 2 LO 26 SX cells connected in series. Key features • A non-replaceable fuse is incorporated.
SAFT
BA5847U - Assembled from 2 LO 26 SX cells connected
Li-SO2 primary battery system BA 5847 B/U Assembled from 2 LO 26 SX cells connected in series. Key features • A non-replaceable fuse is incorporated.
SAFT
BA5800U - Assembled from 2 LO 26 SX cells connected
Li-SO2 primary battery system BA 5800 A/U Assembled from 2 LO 26 SX cells connected in series. Key features • A non-replaceable fuse is incorporated.
SAFT
BA5800A - Assembled from 2 LO 26 SX cells connected
Li-SO2 primary battery system BA 5800 A/U Assembled from 2 LO 26 SX cells connected in series. Key features • A non-replaceable fuse is incorporated.
SAFT
BA5600A - Assembled from 3 LO 26 SX cells connected
Li-SO2 primary battery system BA 5600 A/U Assembled from 3 LO 26 SX cells connected in series. Key features • A non-replaceable fuse is incorporated.
SAFT
BA5600U - Assembled from 3 LO 26 SX cells connected
Li-SO2 primary battery system BA 5600 A/U Assembled from 3 LO 26 SX cells connected in series. Key features • A non-replaceable fuse is incorporated.
