BGB540

Active Biased RF Transistor

Infineon Technologies AG

BGB540 Features

* Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications

* For high gain low noise amplifiers

* Ideal

BGB540 General Description

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (s.

BGB540 Datasheet (129.68 KB)

BGB540 Datasheet Preview — Preview of BGB540 PDF

Datasheet Details

Part number:

BGB540

Manufacturer:

Infineon ↗ Technologies AG

File Size:

129.68 KB

Description:

Active biased rf transistor.
Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2002.

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BGB540 Active Biased Transistor Infineon Technologies AG

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BGB540 Features

BGB540 General Description

Datasheet Details

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