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BGX400 - Silicon Switching Diodes

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Part number BGX400
Manufacturer Infineon Technologies AG
File Size 41.13 KB
Description Silicon Switching Diodes
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BGX400 Silicon Switching Diodes  Switching applications  High breakdown voltage  Halfbridge rectifier 3 2 1 1 3 2 EHA07365 VPS05161 Type BGX400 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Marking GXs 1=C1/A2 Pin Configuration 2=C2 3=A1 Package SOT23 Symbol VR VRM IF IFS Ptot Tj Tstg Value 400 400 250 2 250 150 -65 ... 150 Unit V mA A mW °C Surge forward current, t = 1 ms Total power dissipation, TS = 71 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS  315 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BGX400 Electrical Characteristics at TA = 25°C, unless otherwise specified.
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