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BGX50A - Silicon Switching Diode Array

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Part number BGX50A
Manufacturer Siemens Semiconductor Group
File Size 101.45 KB
Description Silicon Switching Diode Array
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Silicon Switching Diode Array q q BGX 50 A Bridge configuration High-speed switch diode chip Type BGX 50 A Marking U1s Ordering Code (tape and reel) Q62702-G38 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF Ptot Tj Tstg Values 50 70 140 210 150 – 65 … + 150 Unit V mA mW ˚C 640 360 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BGX 50 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
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