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BTS660P Datasheet - Infineon Technologies AG

BTS660P Smart Highside High Current Power Switch

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 4 & Tab R Voltage source Overvoltage protection Current limit Gate protection bb.
PROFET® Data Sheet BTS660P Smart Highside High Current Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Overload protection Current limitation Short circuit protection Over temperature protection Over voltage protection (including load dump) Clamp of negative voltage at output Fast deenergizing of inductive loads 1) Low ohmic inverse current operation Diagnostic.

BTS660P Features

* Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 70 V VON(CL) 62 V Vbb(on) 5.0 58 V RON 9 mΩ IL(ISO) 44 A IL(SC) 90 A IL : IIS 13 000 TO 220-7SMD Application 7 1

BTS660P Datasheet (707.45 KB)

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Datasheet Details

Part number:

BTS660P

Manufacturer:

Infineon ↗ Technologies AG

File Size:

707.45 KB

Description:

Smart highside high current power switch.

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BTS660P Smart Highside High Current Power Switch Infineon Technologies AG

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