N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
Fully protected by embedded protection functions.
Voltage source Overvoltage protection Current limit 1 Gate 1 protection + V bb
BTS612N1 Features
* Overload protection
* Current limitation
* Short circuit protection
* Thermal shutdown
* Overvoltage protection (including load dump)
* Fast demagnetization of inductive loads
* Reverse battery protection1)
* Undervoltage and overvolt
BTS612N1_SiemensSemiconductorGroup.pdf
Datasheet Details
BTS612N1
Siemens Semiconductor Group
183.96 KB
Smart two channel highside power switch (overload protection current limitation short circuit protection thermal shutdown).
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