BTS612N1 - Smart Two Channel Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
Fully protected by embedded protection functions.
Features
Overload protection.
Current limitation.
Short circuit protection.
Thermal shutdown.
Overvoltage protection (including load dump).
Fast demagnetization of inductive loads.
Reverse battery protection1).
Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
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Full PDF Text Transcription
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BTS 612 N1
Smart Two Channel Highside Power Switch
Features
• Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection
Product Summary Overvoltage protection Operating voltage
Vbb(AZ) Vbb(on)
43 5.0 ... 34
both
V V
channels: On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr)
each parallel 200 100 mΩ 2.3 4.
BTS612N1 Datasheet
