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BTS100 - Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)

Key Features

  • q q q q BTS 100 P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS.
  • 50 V ID.
  • 8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 30 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circ.

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Smart Highside Power Switch TEMPFET® Features q q q q BTS 100 P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS – 50 V ID –8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 30 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values – 50 – 50 ± 20 – 8.0 – 1.5 – 32 – 25 500 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ...