BTS612N1 Overview
N channel vertical power FET with charge pump, ground referenced CMOS patible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. 3 IN1 6 IN2 ESD 5 ST Voltage source V Logic Voltage sensor Logic Overvoltage protection Current limit 1 Gate 1 protection Level shifter Rectifier 1 Charge pump 1 Charge pump 2 Limit for unclam ped ind.
BTS612N1 Key Features
- Overload protection
- Current limitation
- Short circuit protection
- Thermal shutdown
- Overvoltage protection (including load dump)
- Fast demagnetization of inductive loads
- Reverse battery protection1)
- Open drain diagnostic output
- Open load detection in OFF-state
- CMOS patible input
