BTS612N1 Description
N channel vertical power FET with charge pump, ground referenced CMOS patible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. Voltage source Overvoltage protection Current limit 1 Gate 1 protection + V bb 4 V Logic Voltage sensor Level shifter Rectifier 1 Charge pump 1 Charge pump 2 Limit for unclamped ind.
BTS612N1 Key Features
- Overload protection
- Current limitation
- Short circuit protection
- Thermal shutdown
- Overvoltage protection (including load dump)
- Fast demagnetization of inductive loads
- Reverse battery protection1)
- Undervoltage and overvoltage shutdown with auto-restart and hysteresis
- Open drain diagnostic output
- Open load detection in OFF-state