IPD04N03LA
Infineon ↗ Technologies AG
348.75kb
Optimos 2 power-transistor. and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology
TAGS
📁 Related Datasheet
IPD04N03L - MOSFET
(Infineon Technologies AG)
IPD04N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) ID 30 4.2 100
P-TO252-5-1
V mΩ A
• Logic Level • Low On-Re.
IPD040N03L - Power-Transistor
(Infineon)
Je]R
%&$ #b $ ;B 1='=-: >5>?;=
6MI[\YMZ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B 4@? F6BD6BC Q+ E2 =:7:65 2 44@B5.
IPD040N03LG - Power-Transistor
(Infineon)
Je]R
%&$ #b $ ;B 1='=-: >5>?;=
6MI[\YMZ Q 2 CDCG:D49:? 8 ' ) - . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B 4@? F6BD6BC Q+ E2 =:7:65 2 44@B5.
IPD042P03L3G - Power-Transistor
(Infineon Technologies)
OptiMOSTM P3 Power-Transistor
Features • single P-Channel (Logic Level) • Enhancement mode • Qualified according JEDEC1) for target applications
• 175.
IPD046N08N5 - MOSFET
(Infineon)
IPD046N08N5
MOSFET
OptiMOSTM5 Power-Transistor, 80 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on.
IPD046N08N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD046N08N5,IIPD046N08N5
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.6mΩ ·Enhancement mode: ·100% avalanc.
IPD048N06L3 - Power-Transistor
(Infineon)
Jf]R
% #
$()'#$% %
IPD048N06L3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPD048N06L3,IIPD048N06L3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤4.8mΩ ·Enhancement mode: ·100% avalanc.
IPD048N06L3G - Power-Transistor
(Infineon Technologies)
Jf]R
% #
$()'#$% %
IPD025N06N - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSTM Power-Transistor, 60 V IPD025N06N
Data Sheet
Rev. 2.5 Final
Power Managem.