Power-Transistor Datasheet | Specifications & PDF Download

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB64

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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DISCRETE SEMICONDUCTORS DATA SHEET M3D110 www.DataSheet.net/ BC140; BC141 NPN medium power transistors Product specification Supersedes data of Sep

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4H11G(NPN) 5H11G(PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and swi

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum

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BAM80 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM80 is Designed for VHF AM power amplifier Applications in the range of 100 to 150 MHz.

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC2073 DESCRIPTION ·With TO-220 package ·Complement to type 2SA940 APPL

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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD231 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·Complement

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC5296 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high r

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DATA SHEET NPN SILICON POWER TRANSISTOR 2SD882 NPN SILICON POWER TRANSISTOR DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output s

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VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for PACKAGE STYLE .500 6L FLG C A 2x ØN FULL R D FEATURES: • •

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ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 o

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Silan Microelectronics SVSP14N60F(FJD)(T)D2_Datasheet 14A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N60F(FJD)(T)D2 is an N-channe

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VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is Designed for PACKAGE STYLE .380 4L FLG .112 x 45° A Ø.125 NOM. FULL R J

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ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89

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A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -100V  IC = -5A H

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