SIDC11D60SIC3 Silicon Carbide Schottky Diode

Infineon Technologies AG

SIDC11D60SIC3 Description

SIDC11D60SIC3 Silicon Carbide Schottky Diode .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prü.

SIDC11D60SIC3 Features

* Worlds first 600V Schottky diode
* Revolutionary semiconductor material Silicon Carbide
* Switching behavior benchmark
* No reverse recovery
* No temperature influence on the switching behavior
* Ideal diode for Power Factor Correction
* No

SIDC11D60SIC3 Applications

* SMPS, PFC, snubber A C Chip Type SIDC11D60SIC3 VBR 600V IF 4A Die Size 1.15 x 0.97 mm2 Package sawn on foil Ordering Code Q67050-A4161A104 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivat

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SIDC11D60SIC3 Datasheet Preview — Preview of SIDC11D60SIC3 PDF

Datasheet Details

Part number: SIDC11D60SIC3
Manufacturer: Infineon ↗ Technologies AG
File Size: 54.39 KB
Datasheet: SIDC11D60SIC3_InfineonTechnologiesAG.pdf
Description: Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode Infineon Technologies AG

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