SIDC112D170H

Fast switching diode

Infineon

SIDC112D170H Features

* 1700V technology, Emitter Controlled Diode 3th generation, 200 µm chip

* soft, fast switching

* low reverse recovery charge

* small temperature coefficient SIDC112D170H A This chip is used for:

* power modules C Applications:

* resonant application

SIDC112D170H General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 REVISION HISTORY Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG A.

SIDC112D170H Datasheet (107.09 KB)