06N03LA - Power Transistor

Datasheet Summary

Features

Ideal for high-frequency dc/dc converters.
N-channel.
Logic level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on).
Superior thermal resistance P-TO263-3-2.
175 °C operating temperature.
dv /dt rated IPB06N03LA IPI06N03LA, IPP06N03LA Product Summary V DS R DS(on),max (SMD version) ID 25 V 5.9 mΩ 50 A P-TO262-3-1 P-TO220-3-1 Type IPB06N03LA IPI06N03LA IPP06N03LA Package P-TO263-.

Infineon Technologies Corporation

📥 Download Datasheet

Datasheet Details

Part number	06N03LA
Manufacturer	Infineon Technologies Corporation
File Size	343.61 KB
Description	Power Transistor
Datasheet	06N03LA Datasheet
Additional preview pages of the 06N03LA datasheet.

📁 Similar Datasheet

06N03 - 25V N-Channel MOSFET (Pan Jit International)
06N02C - N-Channel Enhancement Mode Power MOSFET (FNK)
06N50-CB - N-CHANNEL MOSFET (UTC)
06N80C3 - Power Transistor (Infineon)

Other Datasheets by Infineon Technologies Corporation

Full PDF Text Transcription

Click to expand full text

OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance P-TO263-3-2 • 175 °C operating temperature • dv /dt rated IPB06N03LA IPI06N03LA, IPP06N03LA Product Summary V DS R DS(on),max (SMD version) ID 25 V 5.

Published: Aug 30, 2010 |