Datasheet4U Logo Datasheet4U.com

BAT24-02LS - Silicon Schottky Diode

📥 Download Datasheet

Preview of BAT24-02LS PDF
datasheet Preview Page 2 datasheet Preview Page 3

BAT24-02LS Product details

Description

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Low inductance LS = 0.2 nH (typical) Low capacitance C = 0.2 pF (typical) at voltage VR = 0 V and frequency f = 1 MHz TS

📁 BAT24-02LS Similar Datasheet

  • BAT240A - Silicon Schottky Diode (Siemens Semiconductor Group)
  • BAT20J - HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE (STMicroelectronics)
  • BAT20JFILM - HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE (STMicroelectronics)
  • BAT254 - Schottky barrier diode (NXP)
  • BAT-0+ - Fixed Attenuator (Mini-Circuits)
  • BAT-10+ - Fixed Attenuator (Mini-Circuits)
  • BAT-15+ - Fixed Attenuator (Mini-Circuits)
  • BAT-2+ - Fixed Attenuator (Mini-Circuits)
Other Datasheets by Infineon Technologies
Published: |