BAT24-02LS Datasheet, Diode, Infineon Technologies

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BAT24-02LS

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Infineon ↗ Technologies

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📄 Datasheet

Description:

Silicon schottky diode. This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protect

BAT24-02LS Application

• Applications which frequencies are as high as 24 GHz. Feature list
• Low inductance LS = 0.2 nH (typical)
• Low capacitance C = 0.2

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BAT24-02LS

Infineon Technologies

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