* Low conduction losses Very low reverse current Negligible switching losses Low capacitance diode Low forward and reverse recovery times Extremely fast switching Surface mount device
* SOD-323 DESCRIPTION The BAT20J is using 23V schottky barrier diode encapsu
BAT20J
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High efficiency switching and ultra low leakage current schottky diode.
®
BAT20J
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM IR 25°C(max) @ 15V Tj (max.
📁 Related Datasheet
BAT20JFILM - HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
(STMicroelectronics)
®
BAT20J
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM IR 25°C(max) @ 15V Tj (max.
BAT24-02LS - Silicon Schottky Diode
(Infineon Technologies)
BAT24-02LS
Single silicon RF Schottky diode
Product description
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integra.
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BAT 240A
Silicon Schottky Diode Preliminary data • Rectifier Schottky diode for modem applications • High reverse voltage • For power supply • For cla.
BAT240A - Silicon Schottky Diode
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Silicon Schottky Diode
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3
and industrial applications
High reverse voltage For power sup.
BAT254 - Schottky barrier diode
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D154
BAT254 Schottky barrier diode
Product specification Supersedes data of 1996 Mar 19 1999 Ap.
BAT-0+ - Fixed Attenuator
(Mini-Circuits)
MMIC SURFACE MOUNT
Fixed Attenuator
50Ω DC to 60 GHz 2 W 0 dB
BAT-0+
THE BIG DEAL y Wideband, DC to 60 GHz y High Power Handling, 2 W y Excellent Re.
BAT-10+ - Fixed Attenuator
(Mini-Circuits)
MMIC SURFACE MOUNT
Fixed Attenuator
50Ω DC to 60 GHz 2 W 10 dB
THE BIG DEAL y Wideband, DC to 60 GHz y High Power Handling, 2 W y Excellent Return Los.
BAT-15+ - Fixed Attenuator
(Mini-Circuits)
MMIC SURFACE MOUNT
Fixed Attenuator
50Ω DC to 60 GHz 1.4 W 15 dB
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THE BIG DEAL y Wideband, DC to 60 GHz y High Power Handling, 1.4 W y Excell.
