BSO080P03NS3G Datasheet - Infineon Technologies

BSO080P03NS3G Power-Transistor

BSO080P03NS3G Features

* single P-Channel in SO8

* Qualified according JEDEC1) for target applications

* 150°C operating temperature

* V GS=25 V, specially suited for notebook applications

* Pb-free plating; RoHS compliant

* applications: battery management, load switching

Datasheet Details

BSO080P03NS3G

Infineon ↗ Technologies

531.81 KB

Power-transistor.

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