BSS806N - Small-Signal-Transistor

Infineon Technologies

Datasheet Details

N-channel.
Enhancement mode.
Ultra Logic level (1.8V rated).
Avalanche rated.
Qualified according to AEC Q101.
100% lead-free; RoHS compliant.
Halogen-free according to IEC61249-2-21 BSS806N Product Summary V DS R DS(on),max ID V GS=2.5 V V GS=1.8 V 20 V 57 mΩ 82 2.3 A PG-SOT23 3 1 2 Type BSS806N Package SOT23 Tape and Reel Information H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Paramet.

📁 BSS806N Similar Datasheet

BSS806NE - Small-Signal-Transistor (Infineon)
BSS80 - PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) (Siemens Semiconductor Group)
BSS80B - PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) (Siemens Semiconductor Group)
BSS80C - PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) (Siemens Semiconductor Group)
BSS81B - NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) (Siemens Semiconductor Group)
BSS81C - NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) (Siemens Semiconductor Group)
BSS82B - PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) (Siemens Semiconductor Group)
BSS82C - PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) (Siemens Semiconductor Group)

Other Datasheets by Infineon Technologies

Published: May 30, 2015 |