H30R100 Datasheet - Infineon Technologies

H30R100 Reverse Conducting IGBT

H30R100 Features

* 1.5V Forward voltage of monolithic body Diode

* Full Current Rating of monolithic body Diode

* Specified for TJmax = 175°C

* Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable b

Datasheet Details

H30R100

Infineon ↗ Technologies

320.25 KB

Reverse conducting igbt.

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