HYB39S128160CT Datasheet PDF - Infineon Technologies 128-MBit Synchronous DRAM Specs

HYB39S128160CT - 128-MBit Synchronous DRAM

Datasheet Summary

Description

PC133-222-520 P-TSOP-54 (400mil) 143MHz 4B × 8M x4 SDRAM PC133-333-520 P-TSOP-54 (400mil) 133 MHz 4B × 8M x4 SDRAM PC100-222-620 P-TSOP-54 (400mil) 100 MHz 4B × 8M x4 SDRAM PC133-222-520 P-TSOP-54 (400mil) 143 MHz 4B × 4M x8 SDRAM PC133-333-520 P-TSOP-54 (400mil) 133 MHz 4B × 4M x8 SDRAM PC100-222-

Features

gh. One DQM input is present in x4 and x8 SDRAMs, LDQM and UDQM controls the lower and upper bytes in x16.

Datasheet Details

Part number	HYB39S128160CT
Manufacturer	Infineon Technologies
File Size	515.98 KB
Description	128-MBit Synchronous DRAM
Datasheet	HYB39S128160CT Datasheet
Additional preview pages of the HYB39S128160CT datasheet.

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Full PDF Text Transcription

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HYB 39S128400/800/160CT(L) 128-MBit Synchronous DRAM www.DataSheet4U.com 128-MBit Synchronous DRAM • High Performance: -7 -7.5 133 7.5 5.4 10 6 -8 125 8 6 10 6 Units MHz ns ns ns ns • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write Control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh • Power Down and Clock Suspend Mode • 4096 Refresh Cycles / 64 ms fCK tCK3 tAC3 tCK2 tAC2 143 7 5.4 7.5 5.

Published: Apr 10, 2010 |