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IDT12S60C 2nd Generation thinQ SiC Schottky Diode

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Description

www.DataSheet4U.com IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode .
and charts stated herein.

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Features

* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery/ No forward recovery
* No temperature influence on the switching behavior
* High surge current capability
* Pb-free lead plating; RoHS complia

Applications

* Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 30 12 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like:
* CCM PFC
* Motor Drives Type IDT12S60C Package PG-TO220-2-2 Marking D12S60C Pin 1 C Pin 2 A Maximum ratin

IDT12S60C Distributors

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IDT12S60C 2nd Generation thinQ SiC Schottky Diode Infineon Technologies
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