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IDT03S60C - Schottky Diode

IDT03S60C Description

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode .

IDT03S60C Features

* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery/ no forward recovery
* Temperature independent switching behavior
* High surge current capability

IDT03S60C Applications

* Breakdown voltage tested at 5mA2)
* Optimized for high temperature operation www. DataSheet4U. net Product Summary V DC Qc IF 600 5 3 V nC A PG-TO220-2-2 thinQ! 2G Diode designed for fast switching applications like:
* CCM PFC Type IDT03S60C Maximum ratings, Parameter Cont

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Schottky Diode Infineon Technologies
Infineon Technologies IDT03S60C-like datasheet