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IDT08S60C - 2nd Generation thinQ SiC Schottky Diode

Infineon Technologies AG

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Datasheet Details

Part number	IDT08S60C
Manufacturer	Infineon ↗ Technologies AG
File Size	257.71 KB
Description	2nd Generation thinQ SiC Schottky Diode
Datasheet	IDT08S60C_InfineonTechnologiesAG.pdf

IDT08S60C Product details

Description

and charts stated herein.

Features

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery/ No forward recovery.
No temperature influence on the switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Feb 5, 2011 |