IHW30N100R Datasheet, Igbt, Infineon Technologies

IHW30N100R Features

• Igbt
• 1.5V Forward voltage of monolithic body Diode
• Full Current Rating of monolithic body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop tech

PDF File Details

Part number:

IHW30N100R

Manufacturer:

Infineon ↗ Technologies

File Size:

409.05kb

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📄 Datasheet

Description:

Reverse conducting igbt.

IHW30N100R Application

• Applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to

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IHW30N100R

Infineon Technologies

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