IHW30N120R Datasheet, Igbt, Infineon Technologies

IHW30N120R Features

• Igbt
• Powerful monolithic Body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distrib

PDF File Details

Part number:

IHW30N120R

Manufacturer:

Infineon ↗ Technologies

File Size:

0.99MB

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📄 Datasheet

Description:

Igbt.

IHW30N120R Application

• Applications Features:
• Powerful monolithic Body Diode
• Specified for TJmax = 175°C
• Trench and Fieldstop technology for

TAGS

IHW30N120R

Infineon Technologies

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