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IHW30N120R Datasheet - Infineon Technologies

IHW30N120R IGBT

IHW30N120R Features

* Powerful monolithic Body Diode

* Specified for TJmax = 175°C

* Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior

* NPT technology offers easy parallel switching capabi

IHW30N120R_InfineonTechnologies.pdf

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Datasheet Details

Part number:

IHW30N120R

Manufacturer:

Infineon ↗ Technologies

File Size:

0.99 MB

Description:

Igbt.

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IHW30N120R IHW30N120R IGBT Infineon Technologies

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