ILA03N60 - LightMOS Power Transistor
www.DataSheet4U.com ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 LightMOS Power Transistor C New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature FullPak isolates 2.5 kV AC (1 min.) P-TO-220-3-1 (TO-220AB) G E P-TO-220-3-31 (TO-220 FullPak) P
