IPA60R520E6 Datasheet, Transistor, Infineon Technologies

IPA60R520E6 Features

• Transistor
• Extremely low losses due to very low FOM Rdson
• Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free

PDF File Details

Part number:

IPA60R520E6

Manufacturer:

Infineon ↗ Technologies

File Size:

1.03MB

Download:

📄 Datasheet

Description:

Power transistor. CoolMOS" is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pio

IPA60R520E6 Application

• Applications even more efficient, more compact, lighter, and cooler. Features
• Extremely low losses due to very low FOM Rdson
• Qg an

TAGS

IPA60R520E6

Infineon Technologies

📁 Related Datasheet

IPA60R520E6 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R520E6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate .

IPA60R520C6 - MOSFET (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R520C6 Data Sheet Rev. 2.2 Final Powe.

IPA60R520C6 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R520C6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate .

IPA60R520CP - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.

IPA60R520CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Q.

IPA60R060C7 - MOSFET (Infineon)
IPA60R060C7 MOSFET 600V CoolMOSª C7 Power Device CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the .

IPA60R060P7 - Power-Transistor (Infineon)
IPA60R060P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.

IPA60R060P7 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor IPA60R060P7 FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source O.

IPA60R080P7 - MOSFET (Infineon)
IPA60R080P7 MOSFET 600V CoolMOSª P7 Power Device The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.

IPA60R099C6 - MOSFET (Infineon Technologies)
FGK@?L FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a =^^[FGKm =6 6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6 >PcP KWTTc Rev. 2.3 @X]P[ H^fTa FP].