IPA60R750E6
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IPA60R750E6 - N-Channel MOSFET
(INCHANGE)
INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F Package ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source O.
IPA60R060C7 - MOSFET
(Infineon)
IPA60R060C7
MOSFET
600V CoolMOSª C7 Power Device
CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the .
IPA60R060P7 - Power-Transistor
(Infineon)
IPA60R060P7
MOSFET
600V CoolMOSª P7 Power Device
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.
IPA60R060P7 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
IPA60R060P7
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source O.
IPA60R080P7 - MOSFET
(Infineon)
IPA60R080P7
MOSFET
600V CoolMOSª P7 Power Device
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, d.
IPA60R099C6 - MOSFET
(Infineon Technologies)
FGK@?L
FTcP[ GgXST KT\XR^]SdRc^a @XT[S ?UUTRc LaP]bXbc^a
=^^[FGKm =6
6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J099=6
>PcP KWTTc
Rev. 2.3 @X]P[
H^fTa FP].
IPA60R099C6 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA60R099C6
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate .
IPA60R099C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
600V CoolMOS™ C7 Power Transistor IPA60R099C7
Data Sheet
Rev. 2.0 Final
Power Man.
IPA60R099P6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R099P6
Data Sheet
Rev. 2.1 Final
Power Man.
IPA60R099P6 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPA60R099P6
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate .
