IPB200N15N3G - Power-Transistor

Infineon Technologies

Datasheet Details

Part number	IPB200N15N3G
Manufacturer	Infineon ↗ Technologies
File Size	0.97 MB
Description	Power-Transistor
Datasheet	IPB200N15N3G-InfineonTechnologies.pdf

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 20 mW 50 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Jul 2, 2014 |