IPB200N15N3G
Infineon â Technologies
0.97MB
Power-transistor.
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IPB200N15N3 - Power-Transistor
(Infineon)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G
OptiMOSâ˘3 Power-Transistor
Features ⢠N-channel, normal level ⢠Excellent gate charge x R DS(.
IPB200N15N3G - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB200N15N3G
¡FEATURES ¡With To-263(D2PAK) package ¡Low input capacitance and gate charge ¡Low gate input resistance.
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IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
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Features ⢠N-channel, normal level ⢠Excellent gate charge x R DS(on) product (.
IPB200N25N3G - Power-Transistor
(Infineon Technologies)
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features ⢠N-channel, normal level ⢠Excellent gate charge x R DS(on) product .
IPB200N25N3G - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
¡FEATURES ¡With TO-263( D²PAK ) packaging ¡High speed switching ¡Low gate input resistance ¡Standard level gate drive.
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(Infineon Technologies)
IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15
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Product Summary V DS R DS(on),max (SMD version) ID 30 14.6 22 PG-TO262-3-.
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(Infineon Technologies)
Type
OptiMOSâ˘3 Power-Transistor
Features ⢠Ideal for high frequency switching and sync. rec. ⢠Optimized technology for DC/DC converters ⢠Excellent g.
IPB240N03S4L-R8 - Power-Transistor
(Infineon)
IPB240N03S4L-R8
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Features ⢠N-channel - Enhancement mode ⢠AEC qualified ⢠MSL1 up to 260°C peak reflow ⢠175°C operating.
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(Infineon)
IPB240N03S4L-R9
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Features ⢠N-channel - Enhancement mode ⢠AEC qualified ⢠MSL1 up to 260°C peak reflow ⢠175°C operating .
IPB240N04S4-1R0 - Power-Transistor
(Infineon)
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OptiMOSâ˘-T2 Power-Transistor
Features ⢠N-channel - Enhancement mode ⢠AEC qualified ⢠MSL1 up to 260°C peak reflow ⢠175°C operating.
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