IPB26CNE8NG Datasheet, Power-transistor, Infineon Technologies

IPB26CNE8NG Features

• Power-transistor
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-

PDF File Details

Part number:

IPB26CNE8NG

Manufacturer:

Infineon ↗ Technologies

File Size:

686.06kb

Download:

📄 Datasheet

Description:

Power-transistor.

TAGS

IPB26CNE8NG

Infineon Technologies

📁 Related Datasheet

IPB26CN10N - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB26CN10N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.

IPB26CN10N - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPB26CN10NG - Power-Transistor (Infineon)
IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) .

IPB200N15N3 - Power-Transistor (Infineon)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPB200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.

IPB200N15N3G - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor IPB200N15N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.

IPB200N25N3 - Power-Transistor (Infineon)
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.

IPB200N25N3G - Power-Transistor (Infineon Technologies)
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product .

IPB200N25N3G - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.

IPB22N03S4L-15 - Power-Transistor (Infineon Technologies)
IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 30 14.6 22 PG-TO262-3-.