Datasheet4U Logo Datasheet4U.com

IPP06CNE8NG - Power-Transistor

This page provides the datasheet information for the IPP06CNE8NG, a member of the IPB-06CNE Power-Transistor family.

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – IPP06CNE8NG

Datasheet Details

Part number IPP06CNE8NG
Manufacturer Infineon Technologies
File Size 495.63 KB
Description Power-Transistor
Datasheet download datasheet IPP06CNE8NG Datasheet
Additional preview pages of the IPP06CNE8NG datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 85 6.
Published: |