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SIGC25T120C IGBT

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Description

www.DataSheet4U.com Preliminary SIGC25T120C IGBT Chip in NPT-technology .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prü.

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Features

* 1200V NPT technology
* 200µm chip
* positive temperature coefficient
* easy paralleling This chip is used for:

Applications

* drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Ordering Code C67078-A4674sawn on foil A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Pas

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