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SIGC20T120E IGBT

SIGC20T120E Description

SIGC20T120E IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

SIGC20T120E Features

* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

SIGC20T120E Applications

* drives Chip Type SIGC20T120E VCE IC 1200V 15A Die Size 4.41 x 4.47 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside meta

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