SIGC223T120R2CS IGBT

Infineon Technologies

Description

www.DataSheet4U.com Preliminary SIGC223T120R2CS IGBT Chip in NPT-technology .
AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prü.

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Datasheet Specifications

Part number: SIGC223T120R2CS
Manufacturer: Infineon ↗ Technologies
File Size: 99.73 KB
Datasheet: SIGC223T120R2CS_InfineonTechnologies.pdf
Description: IGBT

Features

* 1200V NPT technology 175µm chip
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
* integrated gate resistor This chip is used for:

Applications

* drives, SMPS, resonant applications C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code tbd SIGC223T120R2CS 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. pos

SIGC223T120R2CS Distributors

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SIGC223T120R2CS IGBT Infineon Technologies

Infineon Technologies SIGC223T120R2CS-like datasheet