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SPB80N06S2-H5 - Power-Transistor

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and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Datasheet Details

Part number SPB80N06S2-H5
Manufacturer Infineon Technologies
File Size 346.23 KB
Description Power-Transistor
Datasheet download datasheet SPB80N06S2-H5 Datasheet
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www.DataSheet4U.com SPP80N06S2-H5 SPB80N06S2-H5 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-Channel 55 5.5 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-H5 SPB80N06S2-H5 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6052 Q67060-S6053 Marking 2N06H5 2N06H5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 700 30 6 ±20 300 -55...
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