Infineon Technologies manufacturer logo and representative part image Part number: SPD07N60S5 Manufacturer: Infineon ↗ Technologies File Size: 806.32kb Download: 📄 Datasheet Description: Power transistor.
SPD07N60S5 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche .
SPD07N60C2 - Cool MOS Power Transistor (Infineon Technologies) Final data SPD07N60C2 SPU07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO-251 .
SPD07N60C2 - Power Transistor (Infineon Technologies) Final data SPD07N60C2 SPU07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO-251 .
SPD07N60C3 - Power Transistor (Infineon Technologies) 63' 1 & 638 1 & &RRO026 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ • :RUOGZLGHEHVW5'6RQLQ72 DQG72 •.
SPD07N60C3 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche.
SPD07N20 - Power Transistor (Infineon Technologies) SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resist.
SPD07N20G - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20G ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche t.
SPD07N20G - Power Transistor (Infineon) SIPMOS® Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resist.
SPD005G - (SPD Series) Smartec Pressure Sensor (Smartec) Specifications SPD series U Pressure Sensor 4 Smartec t a D . w Features * Commercial grade * DIP version for high volume production * Gauge or absol.