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1ED2127S65F - 650V high-side gate driver

Infineon

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Datasheet Details

Part number	1ED2127S65F
Manufacturer	Infineon ↗
File Size	673.68 KB
Description	650V high-side gate driver
Datasheet	1ED2127S65F-Infineon.pdf

1ED2127S65F Product details

Description

The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT.

Features

Infineon thin-film-SOI-technology.
Maximum blocking voltage +650 V.
Output source/sink current +4 A/ -4 A.
Maximum supply voltage of 25 V.
Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
Negative VS transient immunity of 100 V.
Detection of over current and under voltage supply.
Multi-function RCIN/Fault/Enable (RFE) with programmable fault clear time.
Less than 100 ns propagation delay.
DSO-8 package.

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Published: Apr 16, 2025 |