1ED2127S65F 650V high-side gate driver

Infineon

Description

1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and .
The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT.

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Datasheet Specifications

Part number: 1ED2127S65F
Manufacturer: Infineon ↗
File Size: 673.68 KB
Datasheet: 1ED2127S65F-Infineon.pdf
Description: 650V high-side gate driver

Features

* Infineon thin-film-SOI-technology
* Maximum blocking voltage +650 V
* Output source/sink current +4 A/ -4 A
* Maximum supply voltage of 25 V
* Integrated ultra-fast, low RDS(ON) Bootstrap Diode
* Negative VS transient immunity of 100 V
* Dete

Applications

* Motor drives, general purpose inverters
* Forklift
* Light electric vehicles Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Ordering information Table 1 Order information Base part number Package type 1ED2127S65

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1ED2127S65F 650V high-side gate driver Infineon

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