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1ED2127S65F

650V high-side gate driver

1ED2127S65F Features

* Infineon thin-film-SOI-technology

* Maximum blocking voltage +650 V

* Output source/sink current +4 A/ -4 A

* Maximum supply voltage of 25 V

* Integrated ultra-fast, low RDS(ON) Bootstrap Diode

* Negative VS transient immunity of 100 V

* Dete

1ED2127S65F General Description

The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT. The floating channel can be used to drive an Si / SiC power MOSFET or IGBT in the high-side or low-side configuration which operates up to 650 V, with output current of +/-4 A and propa.

1ED2127S65F Datasheet (673.68 KB)

Preview of 1ED2127S65F PDF

Datasheet Details

Part number:

1ED2127S65F

Manufacturer:

Infineon ↗

File Size:

673.68 KB

Description:

650v high-side gate driver.
1ED21x7x Family 1ED21x7x Family Datasheet 650 V high-side gate driver with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and .

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TAGS

1ED2127S65F 650V high-side gate driver Infineon

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