Datasheet4U Logo Datasheet4U.com

1ED2147S65F, 1ED2127S65F Datasheet - Infineon

1ED2147S65F 650V high-side gate driver

The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT. The floating channel can be used to drive an Si / SiC power MOSFET or IGBT in the high-side or low-side configuration which operates up to 650 V, with output current of +/-4 A and propa.

1ED2147S65F Features

* Infineon thin-film-SOI-technology

* Maximum blocking voltage +650 V

* Output source/sink current +4 A/ -4 A

* Maximum supply voltage of 25 V

* Integrated ultra-fast, low RDS(ON) Bootstrap Diode

* Negative VS transient immunity of 100 V

* Dete

1ED2127S65F-Infineon.pdf

This datasheet PDF includes multiple part numbers: 1ED2147S65F, 1ED2127S65F. Please refer to the document for exact specifications by model.
1ED2147S65F Datasheet Preview Page 2 1ED2147S65F Datasheet Preview Page 3

Datasheet Details

Part number:

1ED2147S65F, 1ED2127S65F

Manufacturer:

Infineon ↗

File Size:

673.68 KB

Description:

650v high-side gate driver.

Note:

This datasheet PDF includes multiple part numbers: 1ED2147S65F, 1ED2127S65F.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

1ED21471S65F 650V high-side gate driver (Infineon)

1ED21271S65F 650V high-side gate driver (Infineon)

1ED2127S65F 650V high-side gate driver (Infineon)

1ED020I12-B2 Single channel isolated gate driver (Infineon)

1ED020I12-BT Single channel isolated gate driver (Infineon)

1ED020I12-F Single IGBT Driver (Infineon)

1ED020I12-F2 Single IGBT Driver (Infineon)

1ED020I12-FT Single IGBT Driver (Infineon)

TAGS

1ED2147S65F 1ED2127S65F 650V high-side gate driver Infineon

1ED2147S65F Distributor