2EDS8165H

MOSFET gate-driver

Infineon

2EDS8165H Features

* 4 A / 8 A or 1 A / 2 A source / sink output current

* Up to 10 MHz PWM switching frequency

* PWM signal propagation delay typ. 37 ns with

* 3 ns channel-to-channel mismatch

* +7/-6 ns propagation delay variance

* Common Mode Transient Immunity CMTI >

2EDS8165H General Description

The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology. Due to high driving current, excellent common-mode rejection and fast signal propagatio.

2EDS8165H Datasheet (1.41 MB)

2EDS8165H Datasheet Preview — Preview of 2EDS8165H PDF

Datasheet Details

Part number:

2EDS8165H

Manufacturer:

Infineon ↗

File Size:

1.41 MB

Description:

Mosfet gate-driver.
EiceDRIVER™ 2EDi product family Fast, robust, dual-channel, functional and reinforced isolated MOSFET gate-driver with accurate and stable timing Des.

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2EDS8165H MOSFET gate-driver Infineon

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2EDS8165H Features

2EDS8165H General Description

Datasheet Details

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Description:

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