6EDL04I065NR Datasheet - Infineon

6EDL04I065NR three-phase gate driver

The device 6ED family * 3rd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +650 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor .

6EDL04I065NR Features

* Infineon thin-film-SOI-technology

* Maximum blocking voltage +650 V

* Output source/sink current +0.165 A/-0.375 A

* Integrated ultra-fast, low RDS(ON) Bootstrap Diode

* Insensitivity of the bridge output to negative transient voltages up to -50 V given by S

6EDL04I065NR Datasheet (953.79 KB)