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AUIRF7342Q Dual P-Channel MOSFET

AUIRF7342Q Description

  AUTOMOTIVE GRADE AUIRF7342Q .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

AUIRF7342Q Features

* Advanced Planar Technology
* Low On-Resistance
* Logic Level Gate Drive
* Dual P Channel MOSFET
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Lead-Free, RoHS Compliant
* Automotive Qualified
*   S1 G1 S2

AUIRF7342Q Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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