AUIRF7342Q Datasheet - Infineon

AUIRF7342Q Dual P-Channel MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF7342Q Features

* Advanced Planar Technology

* Low On-Resistance

* Logic Level Gate Drive

* Dual P Channel MOSFET

* Dynamic dv/dt Rating

* 150°C Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* Lead-Free, RoHS Compliant

* Automotive Qualified

* S1 G1 S2