AUIRF7759L2TR Datasheet - Infineon

AUIRF7759L2TR Power MOSFET

The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is compatible with exi.

AUTOMOTIVE GRADE AUIRF7759L2TR Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free  Automotive Qualified Automotive DirectFET® Power MOSFET .

AUIRF7759L2TR Features

* of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Base Part Number Package Type Standard Pack Form Quantity

AUIRF7759L2TR Datasheet (421.00 KB)