AUIRF7759L2TR
Description
The AUIRF7759L2TR(1) bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.
Key Features
- of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability
- These features bine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications
