AUIRF9952Q Dual N/P-Channel MOSFET

Infineon

Description

AUTOMOTIVE GRADE AUIRF9952Q .
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.

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Datasheet Specifications

Part number: AUIRF9952Q
Manufacturer: Infineon ↗
File Size: 307.02 KB
Datasheet: AUIRF9952Q-Infineon.pdf
Description: Dual N/P-Channel MOSFET

Features

* Advanced Planar Technology
* Low On-Resistance
* Logic Level Gate Drive
* Dual N and P Channel MOSFET
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching
* Full Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Co

Applications

* this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme

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AUIRF9952Q Dual P-Channel MOSFET Infineon

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