AUIRF9952Q

Dual N/P-Channel MOSFET

Infineon

AUIRF9952Q Features

* Advanced Planar Technology

* Low On-Resistance

* Logic Level Gate Drive

* Dual N and P Channel MOSFET

* Dynamic dv/dt Rating

* 150°C Operating Temperature

* Fast Switching

* Full Avalanche Rated

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Co

AUIRF9952Q General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF9952Q Datasheet (307.02 KB)