AUIRF9952Q - Dual N/P-Channel MOSFET

Product Overview

Infineon

Datasheet Details

Part number	AUIRF9952Q
Manufacturer	Infineon
File Size	307.02 KB
Description	Dual N/P-Channel MOSFET
Datasheet	AUIRF9952Q Datasheet
Additional preview pages of the AUIRF9952Q datasheet.

Product details

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

Advanced Planar Technology.
Low On-Resistance.
Logic Level Gate Drive.
Dual N and P Channel MOSFET.
Dynamic dv/dt Rating.
150°C Operating Temperature.
Fast Switching.
Full Avalanche Rated.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
S1 N-.

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Published: Dec 1, 2016 |